n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to ob tain the latest version of relevant information to verify before placing orders. APM2322 ordering and marking information features applications absolute maximum ratings (t a = 25 c unless otherwise noted) ? 20v/1.5a , r ds(on) =195m ? (typ.) @ v gs =4.5v r ds(on) =295m ? (typ.) @ v gs =2.5v ? ? ? ? ? super high dense cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? sot-23 package ? power management in notebook computer , portable equipment and battery powered systems. APM2322 handling code temp. range package code package code a : sot-23 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel APM2322 a : m22x x - date code symbol parameter rating unit v dss drain-source voltage 20 v gss gate-source voltage 8 v i d * maximum drain current ? continuous 1.5 i dm maximum drain current ? pulsed(pulse width 300 s) 5.6 a * surface mounted on fr4 board, t 10 sec. pin description g d s top view of sot-23 n-channel mosfet g s d
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 2 APM2322 notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) symbol parameter rating unit t a =25 c 0.8 p d maximum power dissipation t a =100 c 0.3 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja * thermal resistance ? junction to ambient 150 c/w APM2322 symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =250 a 20 v i dss zero gate voltage drain current v ds =16v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.6 0.75 1.5 v i gss gate leakage current v gs = 8v , v ds =0v 10 a v gs =4.5v , i ds =1.5a 195 260 r ds(on) a drain-source on-state resistance v gs =2.5v , i ds =0.8a 295 350 m ? v sd a diode forward voltage i sd =0.5a , v gs =0v 0.8 1.3 v dynamic b q g total gate charge 1.4 1.8 q gs gate-source charge 0.22 q gd gate-drain charge v ds =10v , i ds = 1.5a v gs =4.5v 0.33 nc t d(on) turn-on delay time 6 15 t r turn-on rise time 5 11 t d(off) turn-off delay time 12 24 t f turn-off fall time v dd =10v , i ds =1.5a, v gen =4.5v , r g =6 ? 6 15 ns c iss input capacitance 152 c oss output capacitance 48 c rss reverse transfer capacitance v gs =0v v ds =15v fre q uenc y =1.0mhz 32 pf electrical characteristics (t a = 25 c unless otherwise noted)
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 3 APM2322 0123456 0.12 0.16 0.20 0.24 0.28 0.32 0.36 012345 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 typical characteristics i d- drain current (a) transfer characteristics v gs - gate-to-source voltage (v) threshold voltage vs. junction temperature tj - junction temperature (c) v gs(th)- threshold voltage (v) (normalized) i ds =250 a r ds(on) -on-resistance ( ? ) on-resistance vs. drain current v gs =2.5v i d - drain current (a) v gs =4.5v v gs =2v output characteristics i d -drain current (a) v gs =3,4,5,6,7,8,9,10v v ds - drain-to-source voltage (v) 01234 0 1 2 3 4 5 6 t j =125 o c t j =25 o c t j =-55 o c
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 4 APM2322 0 4 8 121620 0 40 80 120 160 200 12345678 0.10 0.15 0.20 0.25 0.30 0.35 0.40 -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 typical characteristics (cont.) r ds(on) -on-resistance (normalized) on-resistance vs. junction temperature v gs =4.5v i ds =1.5a t j - junction temperature (c) v ds - drain-to-source voltage (v) capacitance capacitance (pf) ciss coss v gs - gate-to-source voltage (v) r ds(on) -on-resistance ( ? ) i ds =1.5a on-resistance vs. gate-to-source voltage gate charge q g - gate charge (nc) v gs -gate-source voltage (v) frequency=1mhz crss r on @tj=25 c :195m ? 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 v ds =10 v i ds = 1.5a
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 5 APM2322 0.0 0.4 0.8 1.2 1.6 0.01 0.1 1 6 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 500 0.01 0.1 1 10 100 0 2 4 6 8 10 12 14 500 typical characteristics (cont.) power (w) single pulse power time (sec) square wave pulse duration (sec) source-drain diode forward voltage i s -source current (a) t j =150c t j =25c v sd -source-to-drain voltage (v) normalized effective transient thermal impedance normalized thermal transient impedence, junction to ambient 1.duty cycle, d=t1/t2 2.per unit base=r thja =150c/w 3.t jm -t a =p dm z thja duty cycle=0.5 d=0.2 d=0.1 d=0.05 d=0.02 single pulse d=0.01 t a =25c
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 6 APM2322 packaging information d e h s e a a1 l c b 3 2 1 millimeters inches dim min. max. min. max. a 1.00 1.30 0.039 0.051 a1 0.00 0.10 0.000 0.004 b 0.35 0.51 0.014 0.020 c 0.10 0.25 0.004 0.010 d 2.70 3.10 0.106 0.122 e 1.40 1.80 0.055 0.071 e 1.90 bsc 0.075 bsc h 2.40 3.00 0.094 0.118 l 0.37 0.0015 sot-23
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 7 APM2322 reference jedec standard j-std-020a april 1999 reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ?20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215-219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3.
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 8 APM2322 carrier tape a j b t2 t1 c t ao e w po p ko bo d1 d f p1 a pp lication a b c j t1 t2 w p e 178 172 1.0 13.0 + 0.2 2.5 0.15 8.4 2 1.5 0.3 8.0+ 0.3 - 0.3 4 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-23 3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 www.anpec.com.tw 9 APM2322 customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions application carrier width cover tape width devices per reel sot- 23 8 5.3 3000
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